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Same model may have multiple batches, images only for reference.
SI1471DH-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1471DH-T1-GE3

Part No SI1471DH-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 2.7A SC-70-6
Datasheet
SI1471DH-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Gate-Source Threshold Voltage 1.6V @ 250μA
Max Gate Charge 9.8nC @ 4.5V
Max Input Capacitance 445pF @ 15V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.5W (Ta), 2.78W (Tc)
Maximum Rds On at Id,Vgs 100 mOhm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Dimension 6-TSSOP, SC-88, SOT-363
Win Source Part Number 064385-SI1471DH-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI1471DH-T1-GE3 CAD Model

Description

The Vishay 064385-SI1471DH-T1-GE3 is a P-Channel MOSFET designed for discrete semiconductor products.

  • Maximum Power Dissipation: 1.5W (Ta), 2.78W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 2.7A (Tc)
  • Gate-Source Threshold Voltage: 1.6V @ 250μA
  • Maximum Gate-Source Voltage: ±12V
  • Maximum Rds On @ Id,Vgs: 100 mOhm @ 2A, 10V
  • Supply and Demand Status: sufficient

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0095 $60.5700
140+ $0.8281 $115.9340
220+ $0.8027 $176.5940
300+ $0.7762 $232.8600
385+ $0.7508 $289.0580
515+ $0.6734 $346.8010
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