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Same model may have multiple batches, images only for reference.
SI1563DH-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1563DH-T1-GE3

Part No SI1563DH-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V 1.13A SC70-6
Datasheet
SI1563DH-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.13A, 880mA
Maximum Rds On at Id,Vgs 280 mOhm @ 1.13A, 4.5V
Gate-Source Threshold Voltage 1V @ 100μA
Max Gate Charge 2nC @ 4.5V
Maximum Power Dissipation 570mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Win Source Part Number 1095706-SI1563DH-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI1563DH-T1-GE3 CAD Model

Description

The SI1563DH-T1-GE3 is a logic level gate N and P-channel MOSFET manufactured by Vishay.

  • Maximum Rds On @ Id, Vgs: 280 mOhm @ 1.13A, 4.5V
  • Package: SC-70-6 (SOT-363)
  • Mounting: SMD (SMT)
  • Drain-Source Breakdown Voltage: 20V
  • Maximum Power Dissipation: 570mW
  • Continuous Drain Current @ 25°C: 1.13A, 880mA
  • Status: obsolete (EOL)
  • Popularity: medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.2640 $58.7520
44+ $2.6784 $117.8496
67+ $2.5953 $173.8851
92+ $2.5110 $231.0120
119+ $2.4278 $288.9082
160+ $2.1760 $348.1600
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Availability: 18,000 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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