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Same model may have multiple batches, images only for reference.
SI1958DH-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI1958DH-T1-E3

Part No SI1958DH-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 1.3A SC70-6
Datasheet
SI1958DH-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.3A
Maximum Rds On at Id,Vgs 205 mOhm @ 1.3A, 4.5V
Gate-Source Threshold Voltage 1.6V @ 250μA
Max Gate Charge 3.8nC @ 10V
Max Input Capacitance 105pF @ 10V
Maximum Power Dissipation 1.25W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Win Source Part Number 1095714-SI1958DH-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1958DH-T1-E3 CAD Model

Description

The Vishay SI1958DH-T1-E3 is a 2 N-Channel (Dual) FET with a logic level gate feature.

  • Mounting Technology: SMD (SMT)
  • Status: Obsolete (EOL)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: SC-70-6 (SOT-363)
  • Maximum Power Dissipation: 1.25W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 1.3A
  • Gate-Source Threshold Voltage: 1.6V @ 250μA
  • Maximum Gate Charge: 3.8nC @ 10V
  • Maximum Input Capacitance: 105pF @ 10V
  • Maximum Rds On @ Id,Vgs: 205 mOhm @ 1.3A, 4.5V
  • Application: Discrete semiconductor products

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4758 $59.4750
300+ $0.3904 $117.1200
460+ $0.3783 $174.0180
635+ $0.3661 $232.4735
820+ $0.3538 $290.1160
1,095+ $0.3172 $347.3340
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Availability: 200 pieces
MOQ: 125 pcs
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