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SI1965DH-T1-E3

Part No SI1965DH-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 12V 1.3A SC70-6
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 1.3A
Maximum Rds On at Id,Vgs 390 mOhm @ 1A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 4.2nC @ 8V
Max Input Capacitance 120pF @ 6V
Maximum Power Dissipation 1.25W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Win Source Part Number 1095715-SI1965DH-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1965DH-T1-E3 CAD Model

Description

The SI1965DH-T1-E3 is a 2 P-Channel (Dual) FET type IC that is manufactured by Vishay.

  • Manufacturer: Vishay
  • FET Type: 2 P-Channel (Dual)
  • Mounting: SMD (SMT)
  • Packaging: SC-70-6 (SOT-363)
  • Maximum Power Dissipation: 1.25W
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current: 1.3A
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Max Gate Charge: 4.2nC @ 8V
  • Max Input Capacitance: 120pF @ 6V
  • Maximum Rds On: 390 mOhm @ 1A, 4.5V
  • Applications: Power management, consumer electronics, commercial, communications, and networking, and automotive applications
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.3784 $51.0840
325+ $0.3105 $100.9125
500+ $0.3008 $150.4000
690+ $0.2911 $200.8590
890+ $0.2814 $250.4460
1,190+ $0.2523 $300.2370
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 21,000 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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