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Same model may have multiple batches, images only for reference.
SI1988DH-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI1988DH-T1-GE3

Part No SI1988DH-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 20V 1.3A SC-70-6
Datasheet
SI1988DH-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 1.3A
Maximum Rds On at Id,Vgs 168 mOhm @ 1.4A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 4.1nC @ 8V
Max Input Capacitance 110pF @ 10V
Maximum Power Dissipation 1.25W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-70-6 (SOT-363)
Win Source Part Number 1095717-SI1988DH-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI1988DH-T1-GE3 CAD Model

Description

The SI1988DH-T1-GE3 from Vishay is a 2 N-Channel (Dual) logic level gate FET that is designed to operate in the temperature range of -55°C to 150°C (TJ).

  • Maximum Power Dissipation: 1.25W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 1.3A
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 4.1nC @ 8V
  • Maximum Input Capacitance: 110pF @ 10V
  • Maximum Rds On @ Id, Vgs: 168 mOhm @ 1.4A, 4.5V
  • Package: SC-70-6 (SOT-363)
  • Packaging: reel - TR
  • Category: Discrete Semiconductor Products
  • Status: obsolete (EOL)

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