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SI3443BDV-T1-E3 Real Image SI3443BDV-T1-E3 Real Image
Same model may have multiple batches, images only for reference.
SI3443BDV-T1-E3 Real Image SI3443BDV-T1-E3 Real Image
SI3443BDV-T1-E3 Real Image SI3443BDV-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI3443BDV-T1-E3

Part No SI3443BDV-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 3.6A 6-TSOP
Datasheet
SI3443BDV-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 3.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 1.4V @ 250μA
Max Gate Charge 9nC @ 4.5V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.1W (Ta)
Maximum Rds On at Id,Vgs 60 mOhm @ 4.7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 028425-SI3443BDV-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI3443BDV-T1-E3 CAD Model

Description

The SI3443BDV-T1-E3 is a P-channel MOSFET manufactured by Vishay.

  • Power Dissipation: 1.1W
  • Mounting: surface-mount technology
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 3.6A @ 25C
  • Gate-Source Threshold Voltage: 1.4V @ 250μA
  • Max Gate Charge: 9nC @ 4.5V
  • Operating Temperature Range: -55C to 150C

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.7128 $53.4600
150+ $0.6677 $100.1550
235+ $0.6452 $151.6220
335+ $0.6000 $201.0000
435+ $0.5775 $251.2125
545+ $0.5549 $302.4205
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,000 pieces
MOQ: 75 pcs
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