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Same model may have multiple batches, images only for reference.
SI3473CDV-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI3473CDV-T1-GE3

Part No SI3473CDV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 8A 6-TSOP
Datasheet
SI3473CDV-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 65nC @ 8V
Max Input Capacitance 2010pF @ 6V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 2W (Ta), 4.2W (Tc)
Maximum Rds On at Id,Vgs 22 mOhm @ 8.1A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 109259-SI3473CDV-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI3473CDV-T1-GE3 CAD Model

Description

The Vishay SI3473CDV-T1-GE3 is a P-Channel MOSFET designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 2W (Ta) and 4.2W (Tc)
  • Continuous Drain Current: 8A (Tc) @ 25°C
  • Drain-Source Breakdown Voltage: 12V
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Rds On at Id,Vgs: 22 mOhm @ 8.1A, 4.5V
  • Maximum Gate-Source Voltage: ±8V
  • Popularity: popular
  • Supply and Demand: balance

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4083 $51.0375
300+ $0.3350 $100.5000
465+ $0.3245 $150.8925
640+ $0.3141 $201.0240
825+ $0.3036 $250.4700
1,105+ $0.2722 $300.7810
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 38,292 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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