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Same model may have multiple batches, images only for reference.
SI3475DV-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI3475DV-T1-E3

Part No SI3475DV-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 200V 0.95A 6-TSOP
Datasheet
SI3475DV-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 950mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 18nC @ 10V
Max Input Capacitance 500pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta), 3.2W (Tc)
Maximum Rds On at Id,Vgs 1.61 Ohm @ 900mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 1095851-SI3475DV-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI3475DV-T1-E3 CAD Model

Description

The Vishay SI3475DV-T1-E3 is a P-channel MOSFET designed for discrete semiconductor products.

  • Channel Type: P-channel
  • Power Dissipation (Max): 2W (Ta), 3.2W (Tc)
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current: 950mA (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Package Quantity: 1 unit
  • Mounting: SMD (SMT)
  • Category: Discrete Semiconductor Products

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.3361 $58.8175
420+ $0.2760 $115.9200
650+ $0.2680 $174.2000
895+ $0.2587 $231.5365
1,155+ $0.2506 $289.4430
1,550+ $0.2241 $347.3550
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Availability: 1,575 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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