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Same model may have multiple batches, images only for reference.
SI3483CDV-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI3483CDV-T1-E3

Part No SI3483CDV-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 8A 6-TSOP
Datasheet
SI3483CDV-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 33nC @ 10V
Max Input Capacitance 1000pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta), 4.2W (Tc)
Maximum Rds On at Id,Vgs 34 mOhm @ 6.1A, 10V
Temperature Range - Operating -55°C to 150°C (TA)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 211630-SI3483CDV-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI3483CDV-T1-E3 CAD Model

Description

This Vishay MOSFET is a discrete semiconductor product with a Win Source Part Number of 211630-SI3483CDV-T1-E3.

  • Polarity: P-Channel
  • Power Dissipation (Max): 2W (Ta) and 4.2W (Tc)
  • Supply and Demand Status: limited
  • Temperature Range: -55°C to 150°C (TA)

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1142 $50.1390
110+ $0.9143 $100.5730
170+ $0.8857 $150.5690
235+ $0.8571 $201.4185
305+ $0.8286 $252.7230
405+ $0.7428 $300.8340
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,800 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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