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Same model may have multiple batches, images only for reference.
SI3493DV-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI3493DV-T1-E3

Part No SI3493DV-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 5.3A 6-TSOP
Datasheet
SI3493DV-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 32nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.1W (Ta)
Maximum Rds On at Id,Vgs 27 mOhm @ 7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 028439-SI3493DV-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI3493DV-T1-E3 CAD Model

Description

The Vishay 028439-SI3493DV-T1-E3 is an obsolete P-Channel MOSFET designed for use in various discrete semiconductor products.

  • Maximum Power Dissipation: 1.1W (Ta)
  • Drain-Source Breakdown Voltage: 20V
  • Package: 6-TSOP
  • Dimensions: SOT-23-6 Thin and TSOT-23-6
  • Mounting: SMD (SMT) technology
  • Drive Voltage: 1.8V to 4.5V
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Rds On at Id, Vgs: 27 mOhm @ 7A, 4.5V
  • Supply and Demand Status: Balanced
  • Status: Obsolete

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Pricing & Ordering

Quantity Unit Price Ext. Price
215+ $0.2691 $57.8565
525+ $0.2218 $116.4450
810+ $0.2148 $173.9880
1,115+ $0.2079 $231.8085
1,440+ $0.2010 $289.4400
1,925+ $0.1802 $346.8850
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Availability: 10,879 pieces
MOQ: 215 pcs
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