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SI3495DV-T1-E3

Part No SI3495DV-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 20V 5.3A 6-TSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 5.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 750mV @ 250μA
Max Gate Charge 38nC @ 4.5V
Maximum Gate-Source Voltage ±5V
Power Dissipation (Max) 1.1W (Ta)
Maximum Rds On at Id,Vgs 24 mOhm @ 7A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 6-TSOP
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 106521-SI3495DV-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI3495DV-T1-E3 CAD Model

Description

The Vishay 106521-SI3495DV-T1-E3 is a P-Channel MOSFET designed for use in Discrete Semiconductor Products.

  • Maximum Power Dissipation: 1.1W (Ta)
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current at 25°C: 5.3A (Ta)
  • Gate-Source Threshold Voltage: 750mV @ 250μA
  • Maximum Gate Charge: 38nC @ 4.5V
  • Maximum Rds On at Id,Vgs: 24 mOhm @ 7A, 4.5V
  • Case / Package: 6-TSOP
  • Dimensions: SOT-23-6 Thin, TSOT-23-6
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Status: Obsolete (EOL)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.6255 $59.4225
230+ $0.5133 $118.0590
350+ $0.4973 $174.0550
480+ $0.4813 $231.0240
625+ $0.4652 $290.7500
835+ $0.4171 $348.2785
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 190 pieces
MOQ: 95 pcs
Order Increment : 1 pcs
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