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Same model may have multiple batches, images only for reference.
SI3851DV-T1-GE3
Same model may have multiple batches, images only for reference.

SI3851DV-T1-GE3

Part No SI3851DV-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description P-ch TSOP-6 30V 200MOHM @ 10V W/ 0.5A Schottky Diode
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TSOP
Continuous Drain Current (ID) 1.6 A
Drain to Source Breakdown Voltage 30 V
Drain to Source Resistance 200 mΩ
Drain to Source Voltage (Vdss) -30 V
Gate to Source Voltage (Vgs) 20 V
Maximum Operating Temperature 150 °C
Max Power Dissipation 830 mW
Min Operating Temperature -55 °C
Power Dissipation 830 mW
RoHS Compliant
Win Source Part Number 1092829-SI3851DV-T1-GE3
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SI3851DV-T1-GE3 CAD Model

Description

The SI3851DV-T1-GE3 is a surface mount transistor that belongs to the Transistors - FETs, MOSFETs - RF category from Vishay.

  • Drain to Source Voltage (Vdss): -30 V
  • Power Dissipation: 830 mW
  • Supply and Demand: currently facing a shortage
  • Maximum Operating Temperature: 150 °C
  • RoHS Compliant: yes
  • Operating Temperature: -55 °C to 150 °C
  • Continuous Drain Current (ID): 1.6 A
  • Drain to Source Breakdown Voltage: 30 V
  • Drain to Source Resistance: 200 mΩ
  • Gate to Source Voltage (Vgs): 20 V

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