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Same model may have multiple batches, images only for reference.
SI4108DY-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SI4108DY-T1-GE3

Part No SI4108DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 20.5A 8-SOIC
Datasheet
SI4108DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Cut Reel
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 20.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 54nC @ 10V
Max Input Capacitance 2100pF @ 38V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.6W (Ta), 7.8W (Tc)
Maximum Rds On at Id,Vgs 9.8 mOhm @ 13.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 091326-SI4108DY-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4108DY-T1-GE3 CAD Model

Description

The Vishay 091326-SI4108DY-T1-GE3 MOSFET is a high-performance N-channel transistor with a maximum power dissipation of 3.6W (Ta) and 7.8W (Tc).

  • Application: discrete semiconductor products
  • Drain-Source Breakdown Voltage: 75V
  • Continuous Drain Current @ 25°C: 20.5A (Tc)
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 54nC @ 10V
  • Maximum Input Capacitance: 2100pF @ 38V
  • Maximum Rds On @ Id,Vgs: 9.8 mOhm @ 13.8A, 10V
  • Popularity: High
  • Supply and Demand Status: limited due to its obsolete (EOL) status.

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Pricing & Ordering

Quantity Unit Price Ext. Price
15+ $3.9178 $58.7670
36+ $3.2144 $115.7184
56+ $3.1139 $174.3784
77+ $3.0134 $232.0318
100+ $2.9129 $291.2900
133+ $2.6115 $347.3295
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Availability: 16,000 pieces
MOQ: 15 pcs
Order Increment : 1 pcs
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