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Same model may have multiple batches, images only for reference.
SI4153DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4153DY-T1-GE3

Part No SI4153DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description P-CHANNEL 30-V (D-S) MOSFET SO-8 / P-Channel 30 V 14.3A (Ta), 19.3A (Tc) 3.1W (Ta), 5.6W (Tc) Surface Mount 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET® Gen III
Package Tape & Reel
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 14.3A (Ta), 19.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 93 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 3600 pF @ 15 V
Power Dissipation (Max) 3.1W (Ta), 5.6W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 742-SI4153DY-T1-GE3TR,742-SI4153DY-T1-GE3CT,742-SI4153DY-T1-GE3DKR
Standard Package 2,500
Win Source Part Number 1092898-SI4153DY-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI4153DY-T1-GE3 CAD Model

Description

The SI4153DY-T1-GE3 is a P-Channel MOSFET from Vishay Siliconix.

  • Series: TrenchFET® Gen III
  • Maximum Drain to Source Voltage: 30V
  • Continuous Drain Current Rating: 14.3A @ 25°C and 19.3A @ Tc
  • Maximum On-Resistance: 9.5mOhm @ 10A and 10V
  • Gate Charge: 93nC @ 10V
  • Input Capacitance: 3600pF @ 15V
  • Package: 8-SOIC
  • Maximum Power Dissipation: 3.1W @ Ta and 5.6W @ Tc
  • Popularity Rating: 70%
  • ECCN: Yes
  • HTSUS: Yes
  • Packaging: Tape and reel
  • Standard Package: 2500
  • Temperature Range: -55°C to 150°C

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