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SI4178DY-T1-E3

Part No SI4178DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 12A 8SO / Trans MOSFET N-CH 30V 12A 8-Pin SO T/R
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.8V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 405pF @ 15V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 2.4W (Ta), 5W (Tc)
Maximum Rds On at Id,Vgs 21 mOhm @ 8.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 211635-SI4178DY-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name SI4178DY
Introduction Date February 03, 2010
ECCN EAR99
Estimated EOL Date 2027
Ultra Librarian 3D Model Ultra Librarian SI4178DY-T1-E3 CAD Model

Description

The SI4178DY-T1-E3 is a P-Channel MOSFET produced by Vishay. It is designed for efficient power management in a variety of applications. The MOSFET features a low on-resistance (RDS(on)) for reduced power loss and improved efficiency, as well as a fast switching speed suitable for high-frequency operations. Its compact surface-mount package allows for easy integration into modern PCB designs.

Applications

      
  • Load Switching: Used as a switch to efficiently control power delivery to various loads.
  •   
  • Power Management: Suitable for DC-DC converters, voltage regulators, and other power management circuits requiring high efficiency.
  •   
  • Battery Management Systems (BMS): Employed in battery charging and discharging circuits to control power flow.
  •   
  • Motor Control: Drives low-power DC motors with efficient switching characteristics.
  •   
  • Power Supplies: Found in switching power supplies used in various electronic devices.

Features

      
  • P-Channel MOSFET: Simple gate drive requirements for ease of use.
  •   
  • Low RDS(on): Minimizes conduction losses, improving overall efficiency.
  •   
  • Fast Switching Speed: Enables efficient operation at higher frequencies.
  •   
  • TrenchFET® Power MOSFET Technology: Enhanced performance and power density.
  •   
  • Lead (Pb)-free and RoHS Compliant: Environmentally friendly construction.
  •   
  • Surface-Mount Package: Suitable for automated assembly and compact designs.

Benefits

      
  • Increased Efficiency: Low on-resistance leads to reduced power dissipation.
  •   
  • Reduced Heat Generation: Lower power losses result in less heat generation.
  •   
  • Extended Battery Life: Efficiency helps in prolonging battery life in portable applications.
  •   
  • Compact Design: Small package allows for use in densely populated circuits.
  •   
  • Improved Reliability: Stable performance enhances overall system reliability.

The SI4178DY-T1-E3 is a versatile and efficient MOSFET for various power management and switching applications. Its low on-resistance, fast switching speed, and compact size make it a valuable component for designers seeking reliable and efficient power control in their electronic devices. Refer to the datasheet for precise operating characteristics.

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3269 $58.8420
435+ $0.2680 $116.5800
670+ $0.2599 $174.1330
920+ $0.2518 $231.6560
1,185+ $0.2437 $288.7845
1,590+ $0.2183 $347.0970
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 87,100 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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