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Same model may have multiple batches, images only for reference.
SI4214DY-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SI4214DY-T1-GE3

Part No SI4214DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 8.5A 8-SOIC
Datasheet
SI4214DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 8.5A
Maximum Rds On at Id,Vgs 23.5 mOhm @ 7A, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 23nC @ 10V
Max Input Capacitance 785pF @ 15V
Maximum Power Dissipation 3.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 064482-SI4214DY-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4214DY-T1-GE3 CAD Model

Description

The Vishay 064482-SI4214DY-T1-GE3 is a 2 N-Channel (Dual) FET with standard features and a maximum power dissipation of 3.1W.

  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 8.5A
  • Gate-Source Threshold Voltage: 2.5V @ 250μA
  • Maximum Gate Charge: 23nC @ 10V
  • Maximum Input Capacitance: 785pF @ 15V
  • Maximum Rds On: 23.5 mOhm @ 7A, 10V
  • Used in: Discrete Semiconductor Products
  • Status: active
  • Popularity: medium
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: 8-SO

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