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Same model may have multiple batches, images only for reference.
SI4286DY-T1-GE3 Vishay
Same model may have multiple batches, images only for reference.

SI4286DY-T1-GE3

Part No SI4286DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Dual N-Channel 40 V (D-S) MOSFET
Datasheet
SI4286DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Series TrenchFET
Packaging Reel - TR
FET Type 2 N-Channel (Dual)
FET Feature Standard
Drain Source Voltage 40V
Current - Continuous Drain (Id) @ 25°C 7A
Rds On (Maximum) @ Id, Vgs 32.5 mOhm @ 8A, 10V
Vgs(th) (Maximum) @ Id 2.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 10.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 375pF @ 20V
Power - Max 2.9W
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Package 8-SOIC (0.154", 3.90mm Width)
Manufacturer Package 8-SO
Win Source Part Number 1249016-SI4286DY-T1-GE3
Manufacturer Homepage www.vishay.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4286DY-T1-GE3 CAD Model

Description

The Vishay SI4286DY-T1-GE3 is a dual N-channel TrenchFET power MOSFET designed for use in high-current switching applications. Vishay SI4286DY-T1-GE3 from Vishay.

  • Type: Dual N-channel TrenchFET power MOSFET
  • Design: Designed for use in high-current switching applications
  • Drain-Source Voltage: 40V
  • On-Resistance: 32.5mOhm @ 8A and 10V gate-source voltage
  • Use: Suitable for use in power supplies, motor control, and other high-current applications
  • Manufacturer: Vishay is a leading manufacturer of discrete semiconductors and passive electronic components

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.1771 $58.8550
120+ $0.9658 $115.8960
190+ $0.9357 $177.7830
260+ $0.9055 $235.4300
330+ $0.8753 $288.8490
445+ $0.7847 $349.1915
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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MOQ: 50 pcs
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