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Same model may have multiple batches, images only for reference.
SI4324DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4324DY-T1-E3

Part No SI4324DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 36A 8-SOIC
Datasheet
SI4324DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 85nC @ 10V
Max Input Capacitance 3510pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.5W (Ta), 7.8W (Tc)
Maximum Rds On at Id,Vgs 3.2 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 028465-SI4324DY-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4324DY-T1-E3 CAD Model

Description

The Vishay SI4324DY-T1-E3 is a MOSFET technology-based electronic component that has a maximum power dissipation of 3.5W (Ta) and 7.8W (Tc).

  • Mounting Type: surface mount device (SMD)
  • Polarity: N-Channel
  • Status: obsolete(EOL)
  • Temperature Range: -55°C to 150°C (TJ)
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 36A (Tc)
  • Maximum Rds On: 3.2 mOhm @ 20A, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.4043 $58.6235
350+ $0.3315 $116.0250
540+ $0.3211 $173.3940
745+ $0.3107 $231.4715
965+ $0.3003 $289.7895
1,290+ $0.2691 $347.1390
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Availability: 5,898 pieces
MOQ: 145 pcs
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