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Same model may have multiple batches, images only for reference.
SI4386DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4386DY-T1-GE3

Part No SI4386DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11A 8-SOIC
Datasheet
SI4386DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 18nC @ 4.5V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.47W (Ta)
Maximum Rds On at Id,Vgs 7 mOhm @ 16A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 130198-SI4386DY-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4386DY-T1-GE3 CAD Model

Description

The SI4386DY-T1-GE3 is a high-performance N-Channel MOSFET manufactured by Vishay.

  • Maximum Power Dissipation: 1.47W (Ta)
  • Drain-Source Breakdown Voltage: 30V

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Pricing & Ordering

Quantity Unit Price Ext. Price
75+ $0.8212 $61.5900
175+ $0.6738 $117.9150
270+ $0.6528 $176.2560
370+ $0.6318 $233.7660
475+ $0.6107 $290.0825
635+ $0.5475 $347.6625
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Availability: 10,300 pieces
MOQ: 75 pcs
Order Increment : 1 pcs
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