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Same model may have multiple batches, images only for reference.
SI4409DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4409DY-T1-E3

Part No SI4409DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 150V 1.3A 8-SOIC
Datasheet
SI4409DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 1.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 12nC @ 10V
Max Input Capacitance 332pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.2W (Ta), 4.6W (Tc)
Maximum Rds On at Id,Vgs 1.2 Ohm @ 500mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1095927-SI4409DY-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI4409DY-T1-E3 CAD Model

Description

This MOSFET electronic component is manufactured by Vishay and has a P-channel polarity.

  • Power Dissipation: 2.2W (Ta), 4.6W (Tc)
  • Supply and Demand: Sufficient
  • Popularity: Medium
  • Case/Package: 8-SOIC
  • Dimension: 0.154", 3.90mm width
  • Maximum Rds On @ Id, Vgs: 1.2 Ohm @ 500mA, 10V
  • Status: Obsolete (EOL)
  • Temperature Range: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
65+ $0.8125 $52.8125
150+ $0.6667 $100.0050
235+ $0.6459 $151.7865
320+ $0.6250 $200.0000
415+ $0.6042 $250.7430
555+ $0.5417 $300.6435
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Availability: 4,189 pieces
MOQ: 65 pcs
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