The Vishay SI4409DY-T1-GE3 is a P-channel MOSFET designed for discrete semiconductor products.

• Mounting Type: SMD
• Package: 8-SO
• Dimension: 8-SOIC (0.154", 3.90mm Width)
• Drain-Source Breakdown Voltage: 150V
• Continuous Drain Current (25°C): 1.3A (Tc)
• Gate-Source Threshold Voltage: 4V @ 250μA
• Maximum Gate Charge: 12nC @ 10V
• Maximum Input Capacitance: 332pF @ 50V
• Maximum Rds On (Id,Vgs): 1.2 Ohm @ 500mA, 10V
• Technology: MOSFET
• Polarity: P-channel
• Power Dissipation (Max): 2.2W (Ta), 4.6W (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Operating Temperature: -55°C to 150°C (TJ)
• Status: obsolete (EOL)
• Popularity: medium