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SI4446DY-T1-GE3

Part No SI4446DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 3.9A 8-SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 3.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 1.6V @ 250μA
Max Gate Charge 12nC @ 4.5V
Max Input Capacitance 700pF @ 20V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 1.1W (Ta)
Maximum Rds On at Id,Vgs 40 mOhm @ 5.2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1095945-SI4446DY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI4446DY-T1-GE3 CAD Model

Description

The Vishay SI4446DY-T1-GE3 is an N-channel MOSFET with a maximum power dissipation of 1.1W (Ta).

  • Mounting: Surface-mount device
  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current: 3.9A (Ta) @ 25°C
  • Gate-Source Threshold Voltage: 1.6V @ 250μA
  • Maximum Gate Charge: 12nC @ 4.5V
  • Status: Obsolete (EOL)
  • Supply and Demand Status: Balanced
  • Applications: Industrial and power management

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.3243 $59.5935
110+ $1.0866 $119.5260
165+ $1.0527 $173.6955
230+ $1.0187 $234.3010
295+ $0.9848 $290.5160
395+ $0.8829 $348.7455
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,270 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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