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Same model may have multiple batches, images only for reference.
SI4500BDY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4500BDY-T1-E3

Part No SI4500BDY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V 6.6A 8SOIC
Datasheet
SI4500BDY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Cut Reel
Status Obsolete(EOL)
FET Type N and P-Channel, Common Drain
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 6.6A, 3.8A
Maximum Rds On at Id,Vgs 20 mOhm @ 9.1A, 4.5V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 17nC @ 4.5V
Maximum Power Dissipation 1.3W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 135805-SI4500BDY-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian SI4500BDY-T1-E3 CAD Model

Description

The Vishay SI4500BDY-T1-E3 is a SMD (SMT) mounted N and P-channel, common drain FET that is designed for use in discrete semiconductor products.

  • Feature: Logic Level Gate
  • Maximum Power Dissipation: 1.3W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 6.6A and 3.8A @ 25°C
  • Gate-Source Threshold Voltage: 1.5V @ 250μA
  • Maximum Rds On: 20 mOhm @ 9.1A, 4.5V
  • Package: 8-SO
  • Operating Temperature Range: -55°C to 150°C
  • Commonly used: Power Management applications
  • Popular: Yes
  • Status: Obsolete (EOL)
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $8.7970 $52.7820
14+ $7.2181 $101.0534
22+ $6.9925 $153.8350
30+ $6.7670 $203.0100
39+ $6.5414 $255.1146
52+ $5.8647 $304.9644
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