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Same model may have multiple batches, images only for reference.
SI4511DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4511DY-T1-E3

Part No SI4511DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V 7.2A 8-SOIC
Datasheet
SI4511DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Cut Reel
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 7.2A, 4.6A
Maximum Rds On at Id,Vgs 14.5 mOhm @ 9.6A, 10V
Gate-Source Threshold Voltage 1.8V @ 250μA
Max Gate Charge 18nC @ 4.5V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 107876-SI4511DY-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Application Field Used in Power Management
Ultra Librarian 3D Model Ultra Librarian SI4511DY-T1-E3 CAD Model

Description

The 107876-SI4511DY-T1-E3 electronic component is an N and P-channel FET type with logic level gate feature.

  • Type: Discrete semiconductor product
  • Package: 8-SO
  • Maximum Power Dissipation: 1.1W
  • Drain-Source Breakdown Voltage: 20V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • HTSUS Code: 8543.70.9860
  • Manufacturer: Vishay

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Pricing & Ordering

Quantity Unit Price Ext. Price
215+ $0.2714 $58.3510
520+ $0.2229 $115.9080
805+ $0.2160 $173.8800
1,105+ $0.2091 $231.0555
1,430+ $0.2021 $289.0030
1,915+ $0.1813 $347.1895
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,010 pieces
MOQ: 215 pcs
Order Increment : 1 pcs
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