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Same model may have multiple batches, images only for reference.
SI4636DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4636DY-T1-E3

Part No SI4636DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 17A 8SOIC
Datasheet
SI4636DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 2635pF @ 15V
Maximum Gate-Source Voltage ±16V
Power Dissipation (Max) 2.5W (Ta), 4.4W (Tc)
Maximum Rds On at Id,Vgs 8.5 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 211641-SI4636DY-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4636DY-T1-E3 CAD Model

Description

The Vishay 211641-SI4636DY-T1-E3 is a high-performance N-channel MOSFET designed for discrete semiconductor products.

  • Maximum power dissipation: 2.5W (Ta) and 4.4W (Tc)
  • Drive voltage: 4.5V and 10V
  • Mounting: Surface-mounted device
  • Operating temperature range: -55°C to 150°C (TJ)
  • Drain-source breakdown voltage: 30V
  • Continuous drain current: 17A @ 25°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $2.7083 $51.4577
45+ $2.2223 $100.0035
70+ $2.1528 $150.6960
97+ $2.0833 $202.0801
125+ $2.0139 $251.7375
167+ $1.8056 $301.5352
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 880 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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