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Same model may have multiple batches, images only for reference.
SI4670DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4670DY-T1-GE3

Part No SI4670DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Dual N-Channel 25-V (D-S) MOSFET with Schottky Diode
Datasheet
SI4670DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Series TrenchFET
Packaging Reel - TR
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain Source Voltage 25V
Current - Continuous Drain (Id) @ 25°C 8A
Rds On (Maximum) @ Id, Vgs 23 mOhm @ 7A, 10V
Vgs(th) (Maximum) @ Id 2.2V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 18nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 680pF @ 13V
Power - Max 2.8W
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Package 8-SOIC (0.154", 3.90mm Width)
Manufacturer Package 8-SO
Win Source Part Number 1249139-SI4670DY-T1-GE3
Manufacturer Homepage www.vishay.com
Family Name Si4670DY
Introduction Date December 11, 2007
ECCN EAR99
Estimated EOL Date 2024
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4670DY-T1-GE3 CAD Model

Description

The SI4670DY-T1-GE3 is a TrenchFET dual N-channel MOSFET from Vishay.

  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Mounting Type: SMD
  • Drain Source Voltage: 25V
  • Gate-Source Threshold Voltage: 2.2V
  • Continuous Drain Current: 8A
  • Maximum Power Dissipation: 2.8W
  • Maximum On-Resistance: 23 mOhm @ 7A and 10V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Estimated EOL Date: 2024

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