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Same model may have multiple batches, images only for reference.
SI4776DY-T1-GE3
Same model may have multiple batches, images only for reference.

SI4776DY-T1-GE3

Part No SI4776DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 11.9A 8SO
Datasheet
SI4776DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.3V @ 1mA
Max Gate Charge 17.5nC @ 10V
Max Input Capacitance 521pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 4.1W (Tc)
Maximum Rds On at Id,Vgs 16 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TA)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 322100-SI4776DY-T1-GE3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4776DY-T1-GE3 CAD Model

Description

The Vishay SI4776DY-T1-GE3 is an N-channel MOSFET that is designed for use in electronic devices and systems.

  • Power Dissipation: 4.1W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 11.9A (Tc)
  • Gate-Source Threshold Voltage: 2.3V @ 1mA
  • Package: 8-SO package
  • Temperature Range: -55°C to 150°C (TA)

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Pricing & Ordering

Quantity Unit Price Ext. Price
23+ $2.5722 $59.1606
55+ $2.1113 $116.1215
85+ $2.0455 $173.8675
117+ $1.9785 $231.4845
151+ $1.9127 $288.8177
203+ $1.7152 $348.1856
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Availability: 6,000 pieces
MOQ: 23 pcs
Order Increment : 1 pcs
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