The Vishay SI4778DY-T1-GE3 is an active N-channel MOSFET with a drain-source breakdown voltage of 25V and a continuous drain current @ 25°C of 8A (Tc).

• Drain-Source Breakdown Voltage: 25V
• Continuous Drain Current: 8A (Tc) @ 25°C
• Package: 8-SO
• Mount: SMD (SMT)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Max Gate Charge: 18nC @ 10V
• Max Input Capacitance: 680pF @ 13V
• Maximum Gate-Source Voltage: ±16V
• Maximum Rds On @ Id,Vgs: 23 mOhm @ 7A, 10V
• Supply and Demand Status: Limited
• Application: Power management