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Same model may have multiple batches, images only for reference.
SI4818DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4818DY-T1-E3

Part No SI4818DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 5.3A 8-SOIC
Datasheet
SI4818DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5.3A, 7A
Maximum Rds On at Id,Vgs 22 mOhm @ 6.3A, 10V
Gate-Source Threshold Voltage 800mV @ 250μA (Min)
Max Gate Charge 12nC @ 5V
Maximum Power Dissipation 1W, 1.25W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 028529-SI4818DY-T1-E3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SI4818DY-T1-E3 CAD Model

Description

The Vishay SI4818DY-T1-E3 is a dual N-channel MOSFET transistor that is designed for use in a wide range of electronic applications.

  • Feature: Logic level gate
  • Package: 8-SO package
  • Maximum Power Dissipation: 1W and 1.25W
  • Continuous Drain Current: 5.3A and 7A @ 25°C
  • Drain-Source Breakdown Voltage: 30V
  • Gate-Source Threshold Voltage: 800mV @ 250μA (Min)
  • Maximum Gate Charge: 12nC @ 5V
  • Supply and Demand Status: Limited as it is an obsolete (EOL) product.

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