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Same model may have multiple batches, images only for reference.
SI4833ADYT1GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4833ADYT1GE3

Part No SI4833ADYT1GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description Trans Mosfet P-ch 30V 3.85A 8-PIN SOIC N T/r
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package SOIC
Continuous Drain Current (ID) 3.85 A
Drain to Source Breakdown Voltage -30 V
Drain to Source Resistance 72 mΩ
Drain to Source Voltage (Vdss) 30 V
Fall Time 8 ns
Gate to Source Voltage (Vgs) 20 V
Height 1.55 mm
Input Capacitance 750 pF
Length 5 mm
Maximum Operating Temperature 150 °C
Max Power Dissipation 2.75 W
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Channels 1
Number of Elements 1
Number of Pins 8
Radiation Hardening No
Rds On Max 72 mΩ
Rise Time 11 ns
RoHS Compliant
Turn-Off Delay Time 19 ns
Turn-On Delay Time 7 ns
Weight 186.993455 mg
Width 4 mm
Win Source Part Number 1092878-SI4833ADYT1GE3
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Vishay
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian SI4833ADYT1GE3 CAD Model

Description

The Vishay SI4833ADYT1GE3 is a surface mount SOIC packaged transistor.

  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current (ID): 3.85A
  • Turn-On Delay Time: 7ns
  • Turn-Off Delay Time: 19ns
  • Gate to Source Voltage (Vgs): 20V
  • Drain to Source Resistance: 72mΩ
  • Maximum Power Dissipation: 2.75W
  • Rise Time: 11ns
  • Fall Time: 8ns
  • Maximum Operating Temperature: 150°C
  • Minimum Operating Temperature: -55°C
  • Supply and Demand Status: short

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