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SI4848DY-T1-E3

Part No SI4848DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 150V 2.7A 8-SOIC
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 150V
Continuous Drain Current at 25°C 2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 2V @ 250μA (Min)
Max Gate Charge 21nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.5W (Ta)
Maximum Rds On at Id,Vgs 85 mOhm @ 3.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 028538-SI4848DY-T1-E3
Family Name Si4848DY
Introduction Date April 27, 2008
ECCN EAR99
Halogen Free Not Compliant
Estimated EOL Date 2024
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4848DY-T1-E3 CAD Model

Description

The Vishay Si4848DY is a N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 150V
  • Continuous Drain Current: 2.7A @ 25°C
  • Gate-Source Threshold Voltage: 2V @ 250μA (Min)
  • Maximum Gate Charge: 21nC @ 10V
  • Maximum Rds On @ Id,Vgs: 85 mOhm @ 3.5A, 10V
  • Package: 8-SOIC (0.154", 3.90mm Width)
  • Operating Temperatures: -55°C to 150°C (TJ)

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Pricing & Ordering

Quantity Unit Price Ext. Price
70+ $0.7277 $50.9390
170+ $0.5971 $101.5070
260+ $0.5784 $150.3840
360+ $0.5598 $201.5280
465+ $0.5411 $251.6115
620+ $0.4851 $300.7620
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 77,500 pieces
MOQ: 70 pcs
Order Increment : 1 pcs
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