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Same model may have multiple batches, images only for reference.
SI4864DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4864DY-T1-GE3

Part No SI4864DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 17A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 3.5mOhm @ 25A, 4.5V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 4.5 V
Vgs (Max) ±8V
Power Dissipation (Max) 1.6W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Product Number SI4864
Other Names SI4864DY-T1-GE3TR,SI4864DY-T1-GE3DKR,SI4864DY-T1-GE3CT,SI4864DY-T1-GE3
Standard Package 2,500
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277581-SI4864DY-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI4864DY-T1-GE3 CAD Model

Description

The SI4864DY-T1-GE3 is an N-Channel MOSFET transistor from Vishay Siliconix.

  • Drain to source voltage: 20V
  • Continuous drain current: 17A @ 25°C
  • Maximum on-state resistance: 3.5mOhm @ 25A and 4.5V
  • Gate charge (Qg): 70nC @ 4.5V
  • Maximum gate-source voltage (Vgs): ±8V
  • Operating temperature range: from -55°C to 150°C
  • Package: 8-SOIC package
  • Part of: Vishay's TrenchFET series

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $15.4254 $61.7016
8+ $12.6568 $101.2544
13+ $12.2612 $159.3956
17+ $11.8657 $201.7169
22+ $11.4702 $252.3444
30+ $10.2836 $308.5080
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Availability: 1,675 pieces
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