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Same model may have multiple batches, images only for reference.
SI4866BDY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4866BDY-T1-E3

Part No SI4866BDY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 12V 21.5A 8-SOIC
Datasheet
SI4866BDY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 21.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 80nC @ 4.5V
Max Input Capacitance 5020pF @ 6V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 2.5W (Ta), 4.45W (Tc)
Maximum Rds On at Id,Vgs 5.3 mOhm @ 12A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 1096023-SI4866BDY-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4866BDY-T1-E3 CAD Model

Description

The Vishay SI4866BDY-T1-E3 is an N-channel MOSFET that has a drain-source breakdown voltage of 12V and a continuous drain current of 21.5A (Tc) @ 25°C.

  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current: 21.5A (Tc) @ 25°C
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 80nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 5.3 mOhm @ 12A, 4.5V
  • Operating Temperature: -55°C to 150°C (TJ)
  • Package: 8-SO
  • Dimension: 8-SOIC (0.154", 3.90mm Width)
  • Category: Discrete Semiconductor Products
  • Packaging: Reel
  • Popularity: Medium
  • Supply and Demand Status: Balanced

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Quantity Unit Price Ext. Price
60+ $0.9794 $58.7640
145+ $0.8039 $116.5655
225+ $0.7785 $175.1625
310+ $0.7542 $233.8020
400+ $0.7288 $291.5200
535+ $0.6537 $349.7295
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