The SI4894BDY-T1-E3 is an N-channel MOSFET with a drain-source breakdown voltage of 30V and a continuous drain current of 8.9A (Ta).

• Drain-Source Breakdown Voltage: 30V
• Continuous Drain Current: 8.9A (Ta)
• Maximum Power Dissipation: 1.4W (Ta)
• Gate-Source Threshold Voltage: 3V @ 250μA
• Maximum Rds On @ Id,Vgs: 11 mOhm @ 12A, 10V
• Case/Package: 8-SO
• Dimension: 8-SOIC (0.154", 3.90mm Width)
• Manufacturer: Vishay
• Compliance: compliant with halogen-free standards
• Category: discrete semiconductor products
• Part Usage: common-used part
• Popularity: high
• Supply and Demand Status: sufficient