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SI4916DY-T1-GE3

Part No SI4916DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 10A 8-SOIC / Trans MOSFET N-CH 30V 7.5A/7.8A 8-Pin SOIC N T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 N-Channel (Half Bridge)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 10A, 10.5A
Maximum Rds On at Id,Vgs 18 mOhm @ 10A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 10nC @ 4.5V
Maximum Power Dissipation 3.3W, 3.5W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 064521-SI4916DY-T1-GE3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Family Name Si4916DY
Introduction Date November 30, 2006
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SI4916DY-T1-GE3 CAD Model

Description

The Vishay Si4916DY is a 2 N-channel (half bridge) FET type electronic component with a logic level gate.

  • Mounting: 8-SO package
  • Ideal for: discrete semiconductor products
  • Maximum Power Dissipation: 3.3W and 3.5W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 10A and 10.5A
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 10nC @ 4.5V
  • Maximum Rds on at Id, Vgs: 18 mOhm @ 10A, 10V
  • Supply and Demand Status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
135+ $0.4343 $58.6305
325+ $0.3569 $115.9925
505+ $0.3453 $174.3765
695+ $0.3338 $231.9910
895+ $0.3234 $289.4430
1,200+ $0.2899 $347.8800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 39,100 pieces
MOQ: 135 pcs
Order Increment : 1 pcs
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