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Same model may have multiple batches, images only for reference.
SI4920DY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4920DY-T1-E3

Part No SI4920DY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 8-SOIC
Datasheet
SI4920DY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Maximum Rds On at Id,Vgs 25 mOhm @ 6.9A, 10V
Gate-Source Threshold Voltage 1V @ 250μA (Min)
Max Gate Charge 23nC @ 5V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 129709-SI4920DY-T1-E3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management
Ultra Librarian 3D Model Ultra Librarian SI4920DY-T1-E3 CAD Model

Description

The Vishay 129709-SI4920DY-T1-E3 is a 2 N-Channel (Dual) logic level gate FET that is commonly used in industrial and power management applications.

  • Maximum Power Dissipation: 2W
  • Drain-Source Breakdown Voltage: 30V
  • Gate-Source Threshold Voltage: 1V @ 250μA (Min)
  • Maximum Gate Charge: 23nC @ 5V
  • Mounting: 8-SO package
  • Maximum Rds On at Id,Vgs: 25 mOhm @ 6.9A, 10V
  • Supply and Demand Status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
215+ $0.2691 $57.8565
525+ $0.2218 $116.4450
810+ $0.2148 $173.9880
1,115+ $0.2079 $231.8085
1,440+ $0.2010 $289.4400
1,925+ $0.1802 $346.8850
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 66,800 pieces
MOQ: 215 pcs
Order Increment : 1 pcs
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