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Same model may have multiple batches, images only for reference.
SI4920DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4920DY-T1-GE3

Part No SI4920DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2N-CH 30V 8-SOIC
Datasheet
SI4920DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Maximum Rds On at Id,Vgs 25 mOhm @ 6.9A, 10V
Gate-Source Threshold Voltage 1V @ 250μA (Min)
Max Gate Charge 23nC @ 5V
Maximum Power Dissipation 2W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 119716-SI4920DY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI4920DY-T1-GE3 CAD Model

Description

The Vishay SI4920DY-T1-GE3 is a dual N-Channel FET type electronic component that has a logic level gate feature.

  • Mounting: surface mount device (SMD)
  • Maximum Power Dissipation: 2W
  • Status: obsolete(EOL)
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Package: 8-SO
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Rds On at Id,Vgs: 25 mOhm @ 6.9A, 10V

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