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Same model may have multiple batches, images only for reference.
SI4943BDY-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI4943BDY-T1-E3

Part No SI4943BDY-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 6.3A 8-SOIC
Datasheet
SI4943BDY-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 6.3A
Maximum Rds On at Id,Vgs 19 mOhm @ 8.4A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 25nC @ 5V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 028561-SI4943BDY-T1-E3
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial, Power Management, Computers & Computer Peripherals
Ultra Librarian 3D Model Ultra Librarian SI4943BDY-T1-E3 CAD Model

Description

The SI4943BDY-T1-E3 is a dual P-channel MOSFET transistor manufactured by Vishay.

  • Category: Discrete Semiconductor Products
  • Packaging: Reel - TR
  • Mounting: SMD (SMT)
  • Maximum Power Dissipation: 1.1W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current: 6.3A @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Maximum Gate Charge: 25nC @ 5V
  • Maximum Rds On at Id,Vgs: 19 mOhm @ 8.4A, 10V
  • Popularity: medium
  • Supply and Demand Status: limited
  • Applications: industrial, power management, computers & computer peripherals applications

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