The SI4952DY-T1-E3 electronic component is manufactured by Vishay and is a part of the Discrete Semiconductor Products category.

• Component Type: dual 2 N-Channel FET type with logic level gate
• Compatibility: industrial and power management applications
• Temperature Range: -55°C to 150°C (TJ)
• Maximum Power Dissipation: 2.8W
• Drain-Source Breakdown Voltage: 25V
• Continuous Drain Current: 8A @ 25°C
• Gate-Source Threshold Voltage: 2.2V @ 250μA
• Maximum Gate Charge: 18nC @ 10V
• Maximum Input Capacitance: 680pF @ 13V
• Maximum Rds On at Id,Vgs: 23 mOhm @ 7A, 10V