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Same model may have multiple batches, images only for reference.
SI4973DY-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI4973DY-T1-GE3

Part No SI4973DY-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 30V 5.8A 8SOIC
Datasheet
SI4973DY-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5.8A
Maximum Rds On at Id,Vgs 23 mOhm @ 7.6A, 10V
Gate-Source Threshold Voltage 3V @ 250μA
Max Gate Charge 56nC @ 10V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SO
Win Source Part Number 1096050-SI4973DY-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Application Field Used in Power Management, Consumer Electronics, Computers & Computer Peripherals
Ultra Librarian 3D Model Ultra Librarian SI4973DY-T1-GE3 CAD Model

Description

The Vishay SI4973DY-T1-GE3 is a dual P-channel FET with a drain-source breakdown voltage of 30V and a continuous drain current of 5.8A at 25°C.

  • Manufacturer: Vishay
  • Channel Type: Dual P-Channel
  • Breakdown Voltage: 30V (Drain-Source)
  • Continuous Drain Current: 5.8A @ 25°C
  • Gate-Source Threshold Voltage: 3V @ 250μA
  • Gate Charge: 56nC @ 10V
  • Rds On: 23 mOhm @ 7.6A, 10V
  • Applications: Power Management, Consumer Electronics, Computers & Computer Peripherals
  • Package: 8-SO
  • Temperature Range: -55°C to 150°C (TJ)
  • Power Dissipation: 1.1W
  • Supply and Demand: Balanced

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Quantity Unit Price Ext. Price
4+ $16.8087 $67.2348
9+ $13.7919 $124.1271
13+ $13.3610 $173.6930
18+ $12.9291 $232.7238
24+ $12.4983 $299.9592
31+ $11.2058 $347.3798
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