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SI5424DC-T1-E3

Name: SI5424DC-T1-E3
Brand: Vishay
SKU: 322390
Availability: InStock
Rating: 4.91 (5 reviews)

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This model is a standard, industry-grade component frequently used in electronic manufacturing.

Part No	SI5424DC-T1-E3
Manufacturer	Vishay
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 30V 6A 1206-8
Datasheet	SI5424DC-T1-E3 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Vishay
Packaging	Reel - TR
Status	Active
Polarity	N-Channel
Technology	MOSFET
Drain-Source Breakdown Voltage	30V
Continuous Drain Current at 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Gate-Source Threshold Voltage	2.3V @ 250μA
Max Gate Charge	32nC @ 10V
Max Input Capacitance	950pF @ 15V
Maximum Gate-Source Voltage	±25V
Power Dissipation (Max)	2.5W (Ta), 6.25W (Tc)
Maximum Rds On at Id,Vgs	24 mOhm @ 4.8A, 10V
Temperature Range - Operating	-55°C to 150°C (TJ)
Mounting	SMD (SMT)
Case / Package	1206-8 ChipFET
Dimension	8-SMD, Flat Lead
Win Source Part Number	098129-SI5424DC-T1-E3
Popularity	Medium
Supply and Demand Status	Sufficient
Ultra Librarian 3D Model	Ultra Librarian SI5424DC-T1-E3 CAD Model

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Description

The Vishay MOSFET is a discrete semiconductor product designed for use in electronic circuits.

Popularity: Medium
Maximum Rds On @ Id,Vgs: 24 mOhm @ 4.8A, 10V
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current @ 25°C: 6A (Tc)
Temperature Range: -55°C to 150°C

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SI5424DC-T1-E3

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