The Vishay 143799-SI5457DC-T1-GE3 is a P-Channel MOSFET with a drain-source breakdown voltage of 20V and a continuous drain current of 6A at 25°C.

• Maximum Rds On: 36 mOhm @ 4.9A and 4.5V gate-source voltage
• Maximum Gate-Source Voltage: ±12V
• Gate-Source Threshold Voltage: 1.4V @ 250μA
• Max Gate Charge: 38nC @ 10V
• Max Input Capacitance: 1000pF @ 10V
• Power Dissipation: 2.3W (Ta) and 5.7W (Tc)
• Temperature Range: -55°C to 150°C (TJ)
• Package: 1206-8 ChipFET package
• Mounting: SMD (SMT) technology
• Common Usage: discrete semiconductor products
• Market Popularity: Medium