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SI5473DC-T1-GE3

Part No SI5473DC-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 5.9A 1206-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 5.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 32nC @ 4.5V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 1.3W (Ta)
Maximum Rds On at Id,Vgs 27 mOhm @ 5.9A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Dimension 8-SMD, Flat Lead
Win Source Part Number 1096088-SI5473DC-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI5473DC-T1-GE3 CAD Model

Description

The Vishay SI5473DC-T1-GE3 is a P-Channel MOSFET with a power dissipation of 1.3W (Ta). Vishay SI5473DC-T1-GE3

  • Channel Type: P-Channel
  • Power Dissipation: 1.3W (Ta)
  • Category: discrete semiconductor products
  • Product Status: obsolete (EOL)
  • Drive Voltage: 1.8V, 4.5V
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current @ 25°C: 5.9A (Ta)
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge @ 4.5V: 32nC
  • Maximum Rds On @ Id,Vgs: 27 mOhm @ 5.9A, 4.5V

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