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SI5475DDC-T1-GE3 Vishay SI5475DDC-T1-GE3 real image SI5475DDC-T1-GE3 label picture
SI5475DDC-T1-GE3 Vishay SI5475DDC-T1-GE3 real image SI5475DDC-T1-GE3 label picture
Same model may have multiple batches, images only for reference.

SI5475DDC-T1-GE3

Part No SI5475DDC-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 12V 6A 1206-8
Datasheet
SI5475DDC-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 12V
Continuous Drain Current at 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 50nC @ 8V
Max Input Capacitance 1600pF @ 6V
Maximum Gate-Source Voltage ±8V
Power Dissipation (Max) 2.3W (Ta), 5.7W (Tc)
Maximum Rds On at Id,Vgs 32 mOhm @ 5.4A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Dimension 8-SMD, Flat Lead
Win Source Part Number 028576-SI5475DDC-T1-GE3
Family Name Si5475DDC
Introduction Date October 19, 2008
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date Obsolete
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Quantity per package 3k pcs
Ultra Librarian 3D Model Ultra Librarian SI5475DDC-T1-GE3 CAD Model

Description

The SI5475DDC-T1-GE3 is a P-channel MOSFET from Vishay.

  • Maximum Power Dissipation: 2.3W (Ta) and 5.7W (Tc)
  • Package: 1206-8 ChipFET package
  • Mounting: SMD (SMT) technology
  • Drain-Source Breakdown Voltage: 12V
  • Continuous Drain Current: 6A (Tc)
  • Applications: power management, motor control, and battery protection
  • Drive Voltage: High drive voltage
  • On-Resistance: Low on-resistance
  • Compliance: RoHS compliant and halogen-free

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18+ $7.5003 $135.0054
27+ $7.2649 $196.1523
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64+ $6.0941 $390.0224
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