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SI5484DU-T1-GE3

Part No SI5484DU-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 12A PPAK CHIPFET
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate-Source Threshold Voltage 2V @ 250μA
Max Gate Charge 55nC @ 10V
Max Input Capacitance 1600pF @ 10V
Maximum Gate-Source Voltage ±12V
Power Dissipation (Max) 3.1W (Ta), 31W (Tc)
Maximum Rds On at Id,Vgs 16 mOhm @ 7.6A, 4.5V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK ChipFet Single
Dimension PowerPAK ChipFET Single
Win Source Part Number 1096089-SI5484DU-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI5484DU-T1-GE3 CAD Model

Description

The Vishay 1096089-SI5484DU-T1-GE3 is an N-Channel MOSFET with a power dissipation of 3.1W (Ta) and 31W (Tc).

  • Manufacturer: Vishay
  • Continuous Drain Current @ 25°C: 12A (Tc)
  • Drain-Source Breakdown Voltage: 20V
  • Maximum Rds On @ Id,Vgs: 16 mOhm @ 7.6A, 4.5V
  • Mounting Style: SMD (SMT)
  • Packaging: Reel - TR
  • Technology: Discrete Semiconductor Products
  • Status: Obsolete (EOL)
  • Popularity: Medium
  • Supply Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.2640 $58.7520
44+ $2.6784 $117.8496
67+ $2.5953 $173.8851
92+ $2.5110 $231.0120
119+ $2.4278 $288.9082
160+ $2.1760 $348.1600
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,500 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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