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Same model may have multiple batches, images only for reference.
SI5504DC-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI5504DC-T1-E3

Part No SI5504DC-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 2.9A 1206-8
Datasheet
SI5504DC-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2.9A, 2.1A
Maximum Rds On at Id,Vgs 85 mOhm @ 2.9A, 10V
Gate-Source Threshold Voltage 1V @ 250μA (Min)
Max Gate Charge 7.5nC @ 10V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Win Source Part Number 097505-SI5504DC-T1-E3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI5504DC-T1-E3 CAD Model

Description

The Vishay 097505-SI5504DC-T1-E3 is a high-quality FET designed for use in a wide range of applications.

  • FET Type: N and P-Channel FET type
  • Drain-Source Breakdown Voltage: 30V
  • Maximum Power Dissipation: 1.1W
  • Operating Temperature: -55°C to 150°C
  • Package: 1206-8 ChipFET package
  • Gate Feature: Logic level gate
  • Category: Discrete Semiconductor Products
  • Status: Obsolete(EOL)

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Pricing & Ordering

Quantity Unit Price Ext. Price
155+ $0.3829 $59.3495
325+ $0.3583 $116.4475
505+ $0.3460 $174.7300
720+ $0.3212 $231.2640
935+ $0.3088 $288.7280
1,170+ $0.2965 $346.9050
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 155 pcs
Order Increment : 1 pcs
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