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Same model may have multiple batches, images only for reference.
SI5504DC-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI5504DC-T1-GE3

Part No SI5504DC-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SI5504DC-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2.9A, 2.1A
Rds On (Max) @ Id, Vgs 85mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 10V
Power - Max 1.1W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case 8-SMD, Flat Lead
Supplier Device Package 1206-8 ChipFET™
Base Product Number SI5504
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278454-SI5504DC-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI5504DC-T1-GE3 CAD Model

Description

The SI5504DC-T1-GE3 is a N and P-Channel FET type electronic component manufactured by Vishay Siliconix.

  • Series: TrenchFET®
  • Win Source Part Number: 1278454
  • Drain to Source Voltage (Vdss): 30V
  • Maximum Power: 1.1W
  • Maximum Gate Charge (Qg): 7.5nC @ 10V
  • Temperature Range: -55°C ~ 150°C (TJ)

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