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Same model may have multiple batches, images only for reference.
SI5519DU-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI5519DU-T1-GE3

Part No SI5519DU-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Arrays
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel
Product Status Obsolete
FET Type N and P-Channel
FET Feature Standard
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6A
Rds On (Max) @ Id, Vgs 36mOhm @ 6.1A, 4.5V
Vgs(th) (Max) @ Id 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 660pF @ 10V
Power - Max 10.4W
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting SMD (SMT)
Package / Case PowerPAK® ChipFET™ Dual
Supplier Device Package PowerPAK® ChipFet Dual
Base Product Number SI5519
Other Names SI5519DU-T1-GE3CT,SI5519DU-T1-GE3TR,SI5519DUT1GE3,SI5519DU-T1-GE3DKR
Standard Package 3,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278480-SI5519DU-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SI5519DU-T1-GE3 CAD Model

Description

The Vishay Siliconix SI5519DU-T1-GE3 is a N and P-Channel MOSFET array designed for use in discrete semiconductor products such as transistors.

  • Drain to Source Voltage (Vdss): 20V
  • Continuous Drain Current (Id) @ 25°C: 6A
  • Maximum Rds On: 36mOhm @ 6.1A, 4.5V
  • Maximum Gate-Source Voltage Threshold (Vgs(th)): 1.8V @ 250μA
  • Maximum Power: 10.4W
  • Gate Charge (Qg): 17.5nC @ 10V
  • Input Capacitance (Ciss): 660pF @ 10V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • ECCN: EAR99

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