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Same model may have multiple batches, images only for reference.
SI5915DC-T1-GE3 Real Image
Same model may have multiple batches, images only for reference.

SI5915DC-T1-GE3

Part No SI5915DC-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 8V 3.4A 1206-8
Datasheet
SI5915DC-T1-GE3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Obsolete(EOL)
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 8V
Continuous Drain Current at 25°C 3.4A
Maximum Rds On at Id,Vgs 70 mOhm @ 3.4A, 4.5V
Gate-Source Threshold Voltage 450mV @ 250μA (Min)
Max Gate Charge 9nC @ 4.5V
Maximum Power Dissipation 1.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Win Source Part Number 1096097-SI5915DC-T1-GE3
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SI5915DC-T1-GE3 CAD Model

Description

The 1096097-SI5915DC-T1-GE3 from Vishay is a dual P-channel Logic Level Gate FET that is designed for use in Discrete Semiconductor Products.

  • Mounting: 1206-8 ChipFET package
  • Maximum Power Dissipation: 1.1W
  • Drain-Source Breakdown Voltage: 8V
  • Continuous Drain Current @ 25°C: 3.4A
  • Gate-Source Threshold Voltage: 450mV @ 250μA (Min)
  • Maximum Gate Charge: 9nC @ 4.5V
  • Maximum Rds On @ Id,Vgs: 70 mOhm @ 3.4A, 4.5V
  • Supply and Demand Status: sufficient
  • Status: obsolete (EOL)

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