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Same model may have multiple batches, images only for reference.
SI5935CDC-T1-E3 Real Image
Same model may have multiple batches, images only for reference.

SI5935CDC-T1-E3

Part No SI5935CDC-T1-E3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 20V 4A 1206-8
Datasheet
SI5935CDC-T1-E3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Standard
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 4A
Maximum Rds On at Id,Vgs 100 mOhm @ 3.1A, 4.5V
Gate-Source Threshold Voltage 1V @ 250μA
Max Gate Charge 11nC @ 5V
Max Input Capacitance 455pF @ 10V
Maximum Power Dissipation 3.1W
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 1206-8 ChipFET
Win Source Part Number 064539-SI5935CDC-T1-E3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI5935CDC-T1-E3 CAD Model

Description

The Vishay SI5935CDC-T1-E3 is a 2 P-channel (dual) FET type transistor with standard FET features. It is suitable for use in discrete semiconductor products.

  • Maximum Power Dissipation: 3.1W
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 4A
  • Gate-Source Threshold Voltage: 1V @ 250μA
  • Maximum Gate Charge: 11nC @ 5V
  • Maximum Input Capacitance: 455pF @ 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
210+ $0.2777 $58.3170
510+ $0.2279 $116.2290
785+ $0.2208 $173.3280
1,085+ $0.2137 $231.8645
1,400+ $0.2065 $289.1000
1,875+ $0.1852 $347.2500
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,920 pieces
MOQ: 210 pcs
Order Increment : 1 pcs
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